[MoC4] GaN HEMTs for Power (I)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[MoC4-01] Monolithic Five-Level π-Type 600 V GaN-on-SiC Power Converter IC

〇Stefan Mönch^1,2, Richard Reiner², Michael Basler², Fouad Benkhelifa², Stefan Müller², Ines Bennour¹, Adrian Söllner¹, Rüdier Quay² (1. Univ. of Stuttgart (Germany), 2. Fraunhofer Inst. for Applied Solide State Physics IAF (Germany))

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