[MoC4] GaN HEMTs for Power (I)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[MoC4-01] Monolithic Five-Level π-Type 600 V GaN-on-SiC Power Converter IC

〇Stefan Mönch^1,2, Richard Reiner², Michael Basler², Fouad Benkhelifa², Stefan Müller², Ines Bennour¹, Adrian Söllner¹, Rüdier Quay² (1. Univ. of Stuttgart (Germany), 2. Fraunhofer Inst. for Applied Solide State Physics IAF (Germany))

A five-level π-type power converter is monolithically integrated into one gallium nitride (GaN) power converter IC on an isolating silicon carbide SiC substrate. Isolating substrates will enable high-voltage operation of complete converter topologies in just one GaN IC, compared to GaN on conductive substrates such as silicon (Si), which suffers from substrate bias issues. This work presents the design and static characterization of these ICs. Two conventional 600V class high-electron-mobility transistors (HEMT) and three monolithic bidirectional blocking GaN switches (MBDS, common-drain) are integrated into one 7.5 mm² chip. Static characterization of all five transistors shows beyond 600 V breakdown voltage, which is a bidirectional, bipolar voltage blocking capability for the MBDSs. The on-resistance of each HEMT and MBDS is around 1.1 Ohm. Static voltage sweeps of the substrate between -600 V and +600 V demonstrates negligible (+3.5%/-1.1%) effect of the back-gate on the on-resistance.