CSW2026
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Session Details

Oral SessionScope C: Power devices

[MoC4]GaN HEMTs for Power (I)

Mon. May 25, 2026 4:30 PM - 5:45 PM JST
Mon. May 25, 2026 7:30 AM - 8:45 AM UTC
Room C(3rd floor)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[MoC4-01]Monolithic Five-Level π-Type 600 V GaN-on-SiC Power Converter IC

〇Stefan Mönch1,2, Richard Reiner2, Michael Basler2, Fouad Benkhelifa2, Stefan Müller2, Ines Bennour1, Adrian Söllner1, Rüdier Quay2 (1. Univ. of Stuttgart (Germany), 2. Fraunhofer Inst. for Applied Solide State Physics IAF (Germany))
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[MoC4-02]Low-Defect Lithium-Doped NiOx Gate via Ultrasonic Spray Pyrolysis Deposition for Robust 1.9 kV Normally-off InAlGaN/GaN HEMTs

〇Yu-Hsuan Chen1, Yan-Kuei Wu1, Wei-Chou Hsu1 (1. National Cheng Kung Univ. (Taiwan))
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[MoC4-03]Development of N-polar GaN HEMTs with p-GaN Gates

〇Robert Hamwey1, Tanmay Chavan1, Boyu Wang1, Nirupam Hatui1, Stacia Keller1, Umesh K. Mishra1 (1. University of California (USA))
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[MoC4-04]2DHG GaN FETs without p-type doped epitaxial layer

Jeonghwan Lim1, Jimy Encomendero Risco2, Grace Xing2, Debdeep Jena2, Yusuke Hayashi2,3, Hideto Miyake4, 〇Yasuyuki Miyamoto1 (1. Science Tokyo (Japan), 2. Cornell University (USA), 3. NIMS (Japan), 4. Mie University (Japan))
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[MoC4-05]Electro-Thermal Characterization of AlGaN/GaN HEMTs Uder Different Pulsing Modes by Thermoreflectance Thermal Imaging

〇Minji Kim1, Jiun Oh1, Joon Seop Kwak1 (1. Korea Inst. of Energy Tech. (Korea))
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