[MoC4] GaN HEMTs for Power (I)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[MoC4-02] Low-Defect Lithium-Doped NiO_x Gate via Ultrasonic Spray Pyrolysis Deposition for Robust 1.9 kV Normally-off InAlGaN/GaN HEMTs

〇Yu-Hsuan Chen¹, Yan-Kuei Wu¹, Wei-Chou Hsu¹ (1. National Cheng Kung Univ. (Taiwan))

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