[MoC4] GaN HEMTs for Power (I)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[MoC4-04] 2DHG GaN FETs without p-type doped epitaxial layer

Jeonghwan Lim¹, Jimy Encomendero Risco², Grace Xing², Debdeep Jena², Yusuke Hayashi^2,3, Hideto Miyake⁴, 〇Yasuyuki Miyamoto¹ (1. Science Tokyo (Japan), 2. Cornell University (USA), 3. NIMS (Japan), 4. Mie University (Japan))

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