Presentation Information
[MoC4-04]2DHG GaN FETs without p-type doped epitaxial layer
Jeonghwan Lim1, Jimy Encomendero Risco2, Grace Xing2, Debdeep Jena2, Yusuke Hayashi2,3, Hideto Miyake4, 〇Yasuyuki Miyamoto1 (1. Science Tokyo (Japan), 2. Cornell University (USA), 3. NIMS (Japan), 4. Mie University (Japan))
Aiming at complementary GaN FET integration on the same epitaxial structure, p-type GaN FETs without a ptype
doped layer were investigated. By the formation of a Ni/Au contact to the 2DHG channel, FET operation showed
a large turn-on voltage around -7 V, although the observed mobility is similar to the Hall mobility. To improve
contact properties, annealing and Mg diffusion were performed. Evaluated using the voltage span required to obtain
±0.02 mA/mm in two-terminal I-V characteristics, annealing at 800°C showed improvement, while annealing at
900°C showed degradation. On the other hand, under the condition of annealing at 870°C using Mg-doped SOG and
a SiO2 protective layer, the minimum voltage span of 0.48 V and a FET turn-on voltage of -4 ~ -5 V were confirmed.
doped layer were investigated. By the formation of a Ni/Au contact to the 2DHG channel, FET operation showed
a large turn-on voltage around -7 V, although the observed mobility is similar to the Hall mobility. To improve
contact properties, annealing and Mg diffusion were performed. Evaluated using the voltage span required to obtain
±0.02 mA/mm in two-terminal I-V characteristics, annealing at 800°C showed improvement, while annealing at
900°C showed degradation. On the other hand, under the condition of annealing at 870°C using Mg-doped SOG and
a SiO2 protective layer, the minimum voltage span of 0.48 V and a FET turn-on voltage of -4 ~ -5 V were confirmed.
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