[SuB4] The potential & future of oxides

3:00 PM - 3:30 PM JST(6:00 AM - 6:30 AM UTC)

[SuB4-02] Resolving Hydrogen-associated Instability Issue for High-mobility Oxide (HMO) Thin-film Transistor

〇Mamoru Furuta¹, Yoshihiro Sato², Takafumi Kambe², Tsutomu Satoyoshi² (1. Kochi Univ. of Technol. (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan))

We propose and demonstrate the concept of hydrogen-free (H-free) high-mobility oxide semiconductor (HMO) thin-film transistor (TFT) for resolving hydrogen-associated instability of the TFT. H-free SiO₂ and SiN_x insulators were successfully deposited using large-area inductively coupled plasma chemical vapor deposition (ICP-CVD) with hydrogen-free source gases. Both insulators were employed as gate dielectric and passivation layers in the TFT, respectively. The H-free In–Ga–Zn–Sn–O (IGZTO) TFT showed a field-effect mobility of 23.2 cm²/Vs and excellent stability under positive gate bias stress for 7200 s at stress temperatures in the range of 60–100 °C