[SuB4] The potential & future of oxides

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[SuB4-03] Oxide semiconductor transistor technology for future 3D LSIs

〇Nobuyoshi Saito¹, Keiji Ikeda¹, Mutsumi Okajima¹ (1. KIOXIA Corporation (Japan))

Oxide semiconductor has gained much attention as a channel material for monolithic 3D LSIs thanks to its low-temperature fabrication and ultralow off-leakage current characteristics. We review the recently proposed 3D LSI devices integrated with oxide semiconductors and their challenges beyond display applications. We also demonstrate 3D replacement-type oxide semiconductor transistors for future 3D DRAM. Oxide semiconductor transistor is a key technology for future high-density and low-power 3D LSIs.