Presentation Information
[SuB4-05]Low temperature growth of non-vacuum process of transparent conductive oxide film
〇Kenji Yoshino1 (1. University of Miyazaki (Japan))
Transparent conductive oxide (TCO) films are essential in applications such as liquid crystal displays, touch panels, and solar cells. Among them, Sn-doped In2O3 (ITO) is the most widely used due to its excellent conductivity and transparency. However, indium is a rare and expensive metal, posing cost and supply issues. To address this, alternative materials such as F-doped SnO2 (FTO) and Ga-doped ZnO (GZO) have attracted attention for their lower cost and comparable performance. Non-doped ZnO film was successfully grown on glass substrates by a conventional spin-coating method at room temperature using a DEZ-based solution under ambient air conditions. To the best of our knowledge, this is the first report of ZnO film growth achieved by a spin-coating process at RT. The resulting film exhibited an average optical transmittance exceeding 80% in the visible region. The surface morphology was flat and homogeneous. In addition, the high transmittance in the infrared region indicates a low free-carrier concentration in the film. The formation of the ZnO film at RT using the DEZ solution is attributed to the reaction between DEZ and atmospheric moisture.
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