[ThA1] III-V Nanostructures: From Spintronics to Advanced Lasers

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[ThA1-02] Investigation of Spin-Filtering Defect Density in Dilute Nitride InGaAsN Quantum Dots via Circularly Polarized Photoluminescence

〇Ayano Morita¹, Daiki Mineyama¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido Univ. (Japan))

We report on the relationship between spin polarization amplification and defect density estimated from rate equations in dilute InGaAsN quantum dots grown at low temperatures below 450°C. Increasing the growth temperature from 420°C to 450°C reduced the defect density contributing to spin polarization amplification by more than an order of magnitude, improving spin capture efficiency.