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Session Details

Oral SessionScope A:Epitaxy and process technologies

[ThA1]III-V Nanostructures: From Spintronics to Advanced Lasers

Thu. May 28, 2026 8:30 AM - 10:30 AM JST
Thu. May 28, 2026 11:30 PM - 1:30 AM UTC
Room A(3rd floor)
Chair:Masashi Akabori(JAIST), Wei Wen Wong(Australian National Univ.)
8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[ThA1-01 Invited]Epitaxial half-metallic Heusler alloy/III-V compound semiconductor heterostructures for semiconductor spintronic devices

〇Shinya Yamada1,2,3, Kohei Hamaya1,2,3 (1. Center for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka (Japan), 2. Department of Systems Innovation, Graduate School of Engineering Science, The University of Osaka (Japan), 3. Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka (Japan))
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[ThA1-02]Investigation of Spin-Filtering Defect Density in Dilute Nitride InGaAsN Quantum Dots via Circularly Polarized Photoluminescence

〇Ayano Morita1, Daiki Mineyama1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1. Hokkaido Univ. (Japan))
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[ThA1-03]MBE Growth Optimization of GaInAsP-based QD/QDa Formation with Reduced PL Linewidth Broadening for Improved Lasers Performances

Arnaud Wilk1, Olivier Delorme1, Alexandre Shen1, Antoine Elias1, Emmanuel Bourgon1, Daniel Micha1, 〇Cosimo Calo1, Frédéric Pommereau1 (1. III-V Lab (France))
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[ThA1-04]Deep Learning–Based Quantitative Analysis of InAs/GaAs Quantum Dot Ensembles via AFM Image Segmentation

〇Jinkwan Kwoen1, Masahiro Kakuda1, Yasuhiko Arakawa1 (1. The Univ. of Tokyo (Japan))
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[ThA1-05]Short-cavity InAs/GaAs Quantum-Dot Lasers with 25-nm GaAs Spacers

〇Hexing Wang1, Huiwen Deng1, Jae-Seong Park1, Xuanchang Zhang1, Cong Lu2, Haifen Kan1, Haotian Zeng1, Yangqian Wang1, Dominic Gallagher3, Junhao Liu1, Danqi Lei1, Hui Jia1, Wei Li2, Peter M. Smowton4, Siming Chen1, Alwyn Seeds1, Huiyun Liu1, Mingchu Tang1 (1. Dept. Electron. & Electr. Eng., Univ. College London (UK), 2. College Mater. Sci. & Eng., Beijing Univ. Tech. (China), 3. Photon Design (UK), 4. School Phys. & Astron., Cardiff Univ. (UK))
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[ThA1-06]Mode-Locked Tapered Semiconductor Laser Emitting at 905nm Using GaAs-Based Al-Free Active Region Structures.

〇OLIVIER PARILLAUD1, ANTOINE ELIAS1, EVA IZQUIERDO1, ANDRES REMIS1, GUILLAUME DACCORD1, MICHEL GARCIA1, JEAN-PIERRE LE GOEC1, TOM VIMONT1, SYLVAIN BOUST1, MICHEL KRAKOWSKI1 (1. III-V Lab (France))
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[ThA1-07]Semi-Insulating Buried Heterostructure with AlInAs Current-Blocking Layers for Efficient High-Power Lasers and Amplifiers

〇Cosimo Calò1, Nicolas Vaissière1, Gustavo Afonso de Castro1, Célia Cruz1, Mokhtar Korti1, Florence Martin1, Karim Mekhazni1, Igor Mijovic1, Arnaud Wilk1, Olivier Delorme1, Jean Decobert1, Frédéric Pommereau1 (1. III-V Lab (France))
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