[ThA1] III-V Nanostructures: From Spintronics to Advanced Lasers

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[ThA1-03] MBE Growth Optimization of GaInAsP-based QD/QDa Formation with Reduced PL Linewidth Broadening for Improved Lasers Performances

Arnaud Wilk¹, Olivier Delorme¹, Alexandre Shen¹, Antoine Elias¹, Emmanuel Bourgon¹, Daniel Micha¹, 〇Cosimo Calo¹, Frédéric Pommereau¹ (1. III-V Lab (France))

We are observing renewed interest in the development of Quantum Dot (QD) lasers in C-band on InP, driven by advancements in material quality, integration with silicon and emerging applications in telecommunications and sensing. Many publications refer to the AlGaInAs material system which can offer high modal gain. On the other hand, GaInAsP-based QDs exhibit lower non-radiative recombination due to smooth interfaces, strong hole confinement and suppressed Auger recombination. QD lasers have long been recognized for their potential to outperform traditional quantum well lasers due to their 3D carrier confinement. To reach C-band, challenges include the formation of quantum dashes due to the low InAs/InP lattice mismatch. Optimized growth conditions have since enabled the formation of more circular QD. All laser structures presented exhibit a narrow PL linewidth, below 35 meV. This led to the epitaxy of lasers, from O-band to L-band, compatible with either Buried Ridge Stripe (BRS) or Semi-Insulating Buried Heterostructure (SIBH) processes. A significant improvement of characteristic temperature has been measured on SIBH-processed lasers.