[ThA1] III-V Nanostructures: From Spintronics to Advanced Lasers

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[ThA1-06] Mode-Locked Tapered Semiconductor Laser Emitting at 905nm Using GaAs-Based Al-Free Active Region Structures.

〇OLIVIER PARILLAUD¹, ANTOINE ELIAS¹, EVA IZQUIERDO¹, ANDRES REMIS¹, GUILLAUME DACCORD¹, MICHEL GARCIA¹, JEAN-PIERRE LE GOEC¹, TOM VIMONT¹, SYLVAIN BOUST¹, MICHEL KRAKOWSKI¹ (1. III-V Lab (France))

We present the realization of GaAs based Mode-Locked tapered semiconductor lasers emitting at 905nm. These lasers must be capable of generating on-demand pulse bursts tailored to specific fluorescent dyes, achieving high data acquisition rates while maintaining cost-efficiency, compactness, and energy efficiency. They will be integrated in a compact laser and detection system that enables ultrafast two-photon fluorescence lifetime imaging microscopy (2ph-FLIM) at megapixel-per-second rates. For this, we have developed epitaxial laser structures using an aluminum-free active region for the realization of the laser diodes. The choice of Al-free active region structures offers a better reliability and very good results on ridge distributed Feedback (DFB) lasers emitting at 852nm and 894nm have already been demonstrated using these materials. We report here on the epitaxial structures realized by Metal Organic Vapor Phase Epitaxy and on material characterization, as well as on the laser diodes fabrication steps and we present the preliminary electro-optic characterization of the devices.