[ThA1] III-V Nanostructures: From Spintronics to Advanced Lasers

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[ThA1-07] Semi-Insulating Buried Heterostructure with AlInAs Current-Blocking Layers for Efficient High-Power Lasers and Amplifiers

〇Cosimo Calò¹, Nicolas Vaissière¹, Gustavo Afonso de Castro¹, Célia Cruz¹, Mokhtar Korti¹, Florence Martin¹, Karim Mekhazni¹, Igor Mijovic¹, Arnaud Wilk¹, Olivier Delorme¹, Jean Decobert¹, Frédéric Pommereau¹ (1. III-V Lab (France))

We report on the optimization of high-mesa semi-insulating InP:Fe buried heterostructure technology through the development of wide-bandgap AlInAs current-blocking layers grown on the sides of dry-etched ridge waveguides. Low growth temperature AlInAs layers show excellent effectiveness against Fe/p-dopant interdiffusion and current leakage in laser structures and reliability in burn-in tests for over 2500 hours at 100°C and 28 kA/cm².