[ThA2] Joint-Novel Nitride Devices/Processes/Materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[ThA2-02] Channeled implantation of Mg ions into homoepitaxial and heteroepitaxial GaN(0001).

〇Atsushi Suyama^1,2, Hideaki Minagawa², Masahiko Aoki², Kazuhiro Yokota², Hitoshi Kawanowa², Jun Suda¹ (1. Department of Electronics, Nagoya University (Japan), 2. Ion Technology Center CO., LTD. (Japan))

Channeled implantation of Mg ions into GaN(0001) was investigated in detail to clarify the effects of Mg dose, tilt angle, and threading dislocation density (TDD) on Mg depth profiles , both experimetally and using MARLOWE simulations.