Presentation Information
[ThA2-02]Channeled implantation of Mg ions into homoepitaxial and heteroepitaxial GaN(0001).
〇Atsushi Suyama1,2, Hideaki Minagawa2, Masahiko Aoki2, Kazuhiro Yokota2, Hitoshi Kawanowa2, Jun Suda1 (1. Department of Electronics, Nagoya University (Japan), 2. Ion Technology Center CO., LTD. (Japan))
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