[ThA2] Joint-Novel Nitride Devices/Processes/Materials | CSW2026

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Oral Joint SessionJoint Session A C E

[ThA2]Joint-Novel Nitride Devices/Processes/Materials

Thu. May 28, 2026 11:00 AM - 12:30 PM JST
Thu. May 28, 2026 2:00 AM - 3:30 AM UTC

Room A(3rd floor)

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[ThA2-01]Tentative

〇Masashiro Horita¹ (1. Nagoya Univ. (Japan))

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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[ThA2-02]Channeled implantation of Mg ions into homoepitaxial and heteroepitaxial GaN(0001).

〇Atsushi Suyama^1,2, Hideaki Minagawa², Masahiko Aoki², Kazuhiro Yokota², Hitoshi Kawanowa², Jun Suda¹ (1. Department of Electronics, Nagoya University (Japan), 2. Ion Technology Center CO., LTD. (Japan))

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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[ThA2-03]Memory Characteristics of Ferroelectric MFMIS GaN HEMTs

〇HyeongJun Joo¹, JongMin Park¹, Geonwook Yoo^2,1 (1. Department of Intelligent Semiconductors, Soongsil Univ. (Korea), 2. School of Electronic Engineering, Soongsil Univ. (Korea))

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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[ThA2-04]X-ray Spectroscopic Characterization of Surface Oxidation of ScAlN Thin Films Grown on GaN

〇Hikaru Sasaki¹, Akihira Munakata¹, Takahito Takeda¹, Masaki Kobayashi¹, Atsushi Fujimori¹, Ryota Yamamoto², Sawaki Sato², Atsushi Kobayashi², Masakazu Sugiyama¹, Ryosho Nakane¹, Takuya Maeda¹ (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Sci. (Japan))

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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[ThA2-05]Electrical Characterization of ScAlN Thin Films Epitaxially Grown on n-GaN/sapphire Substrates by Sputtering

〇Kosuke Joya¹, Sawaki Sato², Atsushi Kobayashi², Takuya Maeda¹ (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Sci. (Japan))

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