Presentation Information
[ThA2-03]Memory Characteristics of Ferroelectric MFMIS GaN HEMTs
〇HyeongJun Joo1, JongMin Park1, Geonwook Yoo2,1 (1. Department of Intelligent Semiconductors, Soongsil Univ. (Korea), 2. School of Electronic Engineering, Soongsil Univ. (Korea))
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