Presentation Information
[ThA2-03]Memory Characteristics of Ferroelectric MFMIS GaN HEMTs
〇HyeongJun Joo1, JongMin Park1, Geonwook Yoo2,1 (1. Department of Intelligent Semiconductors, Soongsil Univ. (Korea), 2. School of Electronic Engineering, Soongsil Univ. (Korea))
We successfully demonstrated AlScN-based MFMIS GaN HEMTs with enhanced memory
performance. Increasing the area ratio improved the memory window and subthreshold swing by maximizing the
effective voltage across the ferroelectric layer. The device also exhibited stable 2-bit operation through multi-level
conductance states, offering a promising solution for high-density non-volatile memory.
performance. Increasing the area ratio improved the memory window and subthreshold swing by maximizing the
effective voltage across the ferroelectric layer. The device also exhibited stable 2-bit operation through multi-level
conductance states, offering a promising solution for high-density non-volatile memory.
Comment
To browse or post comments, you must log in.Log in