[ThA2] Joint-Novel Nitride Devices/Processes/Materials

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[ThA2-04] X-ray Spectroscopic Characterization of Surface Oxidation of ScAlN Thin Films Grown on GaN

〇Hikaru Sasaki¹, Akihira Munakata¹, Takahito Takeda¹, Masaki Kobayashi¹, Atsushi Fujimori¹, Ryota Yamamoto², Sawaki Sato², Atsushi Kobayashi², Masakazu Sugiyama¹, Ryosho Nakane¹, Takuya Maeda¹ (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Sci. (Japan))

Surface oxidation states of ScAlN thin films grown by sputtering and molecular beam epitaxy (MBE) on GaN substrates were investigated using X-ray photoemission spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The XPS results revealed that the surface oxidation was enhanced as Sc composition increased, and the oxidation was mostly pronounced near the surface. Although a GaN cap layer suppressed Al oxidation for the MBE-grown samples, Sc oxidation persisted. The XAS analysis revealed that the oxidized surface region had a rock salt-like structure in octahedral symmetry, rather than the initial wurtzite structure.