[ThA2] Joint-Novel Nitride Devices/Processes/Materials

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[ThA2-05] Electrical Characterization of ScAlN Thin Films Epitaxially Grown on n-GaN/sapphire Substrates by Sputtering

〇Kosuke Joya¹, Sawaki Sato², Atsushi Kobayashi², Takuya Maeda¹ (1. The Univ. of Tokyo (Japan), 2. Tokyo Univ. of Sci. (Japan))

We investigated the electrical characteristics of Pt/ScAlN/n⁺-GaN heterostructures to clarify the origins of asymmetric behaviors. Capacitance-voltage(C-V) measurements revealed the absence of 2DEG and clockwise hysteresis loops, while current-voltage(I-V) characteristics exhibited significant transient currents and asymmetry. Static measurements with delay times suppressed these transient behaviors, suggesting that carrier trapping by multiple defect species at and/or near the interface critically governs the device properties.