[TuB2] Oxide Devices & Materials

11:30 AM - 12:00 PM JST(2:30 AM - 3:00 AM UTC)

[TuB2-02 Invited] Challenges and Prospects of Oxide Thin-Film Transistors for DRAM Applications

〇Junghwan Kim¹ (1. UNIST (Korea))

Ultrathin channel scaling is essential for implementing oxide thin-film transistors (TFTs) in BEOL-compatible electronics. However, bias-stress instabilities, including negative-bias temperature stress (NBTS) and positive-bias temperature stress (PBTS), become more severe as the channel thickness decreases. In this study, we systematically investigate the thickness-dependent bias-stress instability of oxide TFTs