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Session Details

Oral SessionScope G: Oxide materials and devices

[TuB2]Oxide Devices & Materials

Tue. May 26, 2026 11:00 AM - 12:45 PM JST
Tue. May 26, 2026 2:00 AM - 3:45 AM UTC
Room B(3rd floor)
Chair:Takanori Takahashi(Nara Institute of Science and Technology)
11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[TuB2-01]Scalability of nanosheet oxide semiconductor transistors

〇Masaharu Kobayashi1 (1. The University of Tokyo (Japan))
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11:30 AM - 12:00 PM JST(2:30 AM - 3:00 AM UTC)

[TuB2-02]Tentative

〇Junghwa Kim1 (1. UNIST (Korea))
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[TuB2-03]First Study of Ohmic Contacts in MBE-Grown K-doped p-Type SnO TFTs

〇Muhaimin Mareum Khan1, Seungmin Lee 1, Anna Sunah Park 1, Joseph E. Dill1, Bennett J. Cromer 1, Darrell G Schlom1, Debdeep Jena1, Huili Grace Xing 1 (1. Cornell University (USA))
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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[TuB2-04]Investigation and Optimization of HfSiOx as a Gate Dielectric on N-polar GaN: Impact of Surface Pretreatments and SiO2:HfO2 Composition

〇Stefan Kosanovic1, Sorena Shadzinavaz1, Oguz Odabasi2, Harsh Rana1, Nirupam Hatui1, Elaheh Ahmadi1 (1. UCSB (USA), 2. UCLA (USA))
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12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[TuB2-05]Characterization of Electrically Active Defects in AlGaInP-based MOS Structures via Impedance Spectroscopy

〇Muskan Jain1, Rajan Bharti1, Paolo La Torraca1, Pavel Kirilenko1, Satish Bonam1, Karim Cherkaoui1, Alexander Tonkikh2, Dmitry Sizov3, Paul Gore2, Michael Grundmann3, Paul K Hurley1 (1. Tyndall National Institute, University College Cork (Ireland), 2. Meta Reality Labs Ireland (Ireland), 3. Meta Reality Labs USA (USA))
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