[TuB2] Oxide Devices & Materials

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[TuB2-03] First Study of Ohmic Contacts in MBE-Grown K-doped p-Type SnO TFTs

〇Muhaimin Mareum Khan¹, Seungmin Lee ¹, Anna Sunah Park ¹, Joseph E. Dill¹, Bennett J. Cromer ¹, Darrell G Schlom¹, Debdeep Jena¹, Huili Grace Xing ¹ (1. Cornell University (USA))

CMOS technologies composed exclusively of oxide-based materials remain a significant technological challenge, largely due to the absence of p-type oxide semiconductors with electrical performance comparable to their established n-type counterparts. Among the limited candidates, α-SnO has emerged as a promising p-type oxide owing to its relatively high hole mobility, compatibility with back-end-of-line (BEOL) processing temperatures, and established epitaxial growth pathways. Prior work by Chae et al. demonstrated in-situ potassium doping of α-SnO via suboxide molecular beam epitaxy (MBE), enabling precise control of hole concentration without degrading mobility. In this work, we advance on this foundation by fabricating suboxide-MBE-grown α-SnO thin-film transistors (TFTs) that preserve the Hall-effect mobility while remaining fully compliant with BEOL thermal constraints. We further perform a systematic investigation of ohmic contacts to α-SnO, examining Pt and Ni contacts across a wide doping range and employing post-metallization annealing to minimize contact resistance and improve overall device performance.