[TuB2] Oxide Devices & Materials

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[TuB2-04] Investigation and Optimization of HfSiO_x as a Gate Dielectric on N-polar GaN: Impact of Surface Pretreatments and SiO₂:HfO₂ Composition

〇Stefan Kosanovic¹, Sorena Shadzinavaz¹, Oguz Odabasi², Harsh Rana¹, Nirupam Hatui¹, Elaheh Ahmadi¹ (1. UCSB (USA), 2. UCLA (USA))

Gallium Nitride (GaN) Metal oxide semiconductor capacitors (MOSCAPs) with different pretreatments prior to atomic layer deposition (ALD) of hafnium silicon oxide (HfSiO_x) were fabricated to determine optimal pretreatment to maximize dielectric constant and breakdown field. The SiO₂:HfO₂ ratio was altered to see the tradeoff between dielectric constant and breakdown field, and SiO₂:HfO₂ 1:2 was determined the optimal ratio for scaled device performance with a dielectric constant of 9.5 and a breakdown field of 10 MV/cm.