Presentation Information
[TuB2-04]Investigation and Optimization of HfSiOx as a Gate Dielectric on N-polar GaN: Impact of Surface Pretreatments and SiO2:HfO2 Composition
〇Stefan Kosanovic1, Sorena Shadzinavaz1, Oguz Odabasi2, Harsh Rana1, Nirupam Hatui1, Elaheh Ahmadi1 (1. UCSB (USA), 2. UCLA (USA))
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