[TuB2] Oxide Devices & Materials

12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[TuB2-05] Characterization of Electrically Active Defects in AlGaInP-based MOS Structures via Impedance Spectroscopy

〇Muskan Jain¹, Rajan Bharti¹, Paolo La Torraca¹, Pavel Kirilenko¹, Satish Bonam¹, Karim Cherkaoui¹, Alexander Tonkikh², Dmitry Sizov³, Paul Gore², Michael Grundmann³, Paul K Hurley¹ (1. Tyndall National Institute, University College Cork (Ireland), 2. Meta Reality Labs Ireland (Ireland), 3. Meta Reality Labs USA (USA))

This study investigates the distribution of electrically active defects in AlGaInP/Al₂O₃ metal-oxide-semiconductor (MOS) structures, relevant for multi-junction photovoltaic solar cells and red micro-LEDs, using impedance spectroscopy supported by physics-based TCAD simulations. Experimental results and analysis reveal a high density of electrically active defects in the AlGaInP near the semiconductor/Al₂O₃ interface which pins the surface potential, and border traps in the Al₂O_3. The presence of pinning levels in AlGaInP is confirmed across all examined material compositions, i.e. (Al_xGa_1-x)_0.5In_0.5P (x= 0, 0.5, 0.8, 1).