[TuB2] Oxide Devices & Materials

12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[TuB2-05] Characterization of Electrically Active Defects in AlGaInP-based MOS Structures via Impedance Spectroscopy

〇Muskan Jain¹, Rajan Bharti¹, Paolo La Torraca¹, Pavel Kirilenko¹, Satish Bonam¹, Karim Cherkaoui¹, Alexander Tonkikh², Dmitry Sizov³, Paul Gore², Michael Grundmann³, Paul K Hurley¹ (1. Tyndall National Institute, University College Cork (Ireland), 2. Meta Reality Labs Ireland (Ireland), 3. Meta Reality Labs USA (USA))

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