[TuB4] High-Speed III-V Transistors

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[TuB4-01 Invited] Wideband 300-GHz InP DHBT Power Amplifier Achieving 280-Gb/s Signal Generation with Digital Predistortion

〇Teruo Jyo¹, Sam Kusano², Hiroaki Katsurai³, Hiroshi Hamada¹, Munehiko Nagatani¹, Ibrahim Abdo¹, Daisuke Kitayama¹, Yuta Shiratori¹, Hiroyuki Takahashi¹ (1. NTT Inc. (Japan), 2. Keysight Technologies, Inc. (USA), 3. NTT Innovative Devices Corporation (Japan))

In this invited paper, we present a 300-GHz-band power amplifier (PA) fabricated in a 250-nm InP double-heterojunction bipolar transistor (DHBT) technology targeting ultra-high-capacity wireless links. To achieve wideband operation and high output power, the PA integrated circuit (IC) incorporates an inter-stage impedance-matching network that utilizes multiple stub structures, along with a T-junction power combiner providing impedance-transforming functionality. The PA module implementing the PA IC achieves a maximum gain of 30 dB and maintains more than 20 dB of gain across the 220-310 GHz range, with a saturated output power of 9.1 dBm. Using this module, we demonstrate a 100-Gbps (25-GBaud 16QAM) over-the-air wireless transmission over a distance of 40 m. Furthermore, by applying a spectral digital predistortion (DPD) method to compensate for PA nonlinearity, we achieve 280-Gbps (35-GBaud 256QAM) signal generation at an output power of 0 dBm, representing the highest reported data rate in the 300-GHz band.