CSW2026
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Session Details

Oral SessionScope B: RF and THz devices

[TuB4]High-Speed III-V Transistors

Tue. May 26, 2026 4:30 PM - 6:30 PM JST
Tue. May 26, 2026 7:30 AM - 9:30 AM UTC
Room B(3rd floor)
Chair:Safumi Suzuki(Institute of Science Tokyo)
4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[TuB4-01]Wideband 300-GHz InP DHBT Power Amplifier Achieving 280-Gb/s Signal Generation with Digital Predistortion

〇Teruo Jyo1, Sam Kusano2, Hiroaki Katsurai3, Hiroshi Hamada1, Munehiko Nagatani1, Ibrahim Abdo1, Daisuke Kitayama1, Yuta Shiratori1, Hiroyuki Takahashi1 (1. NTT Inc. (Japan), 2. Keysight Technologies, Inc. (USA), 3. NTT Innovative Devices Corporation (Japan))
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5:00 PM - 5:30 PM JST(8:00 AM - 8:30 AM UTC)

[TuB4-02]A W-band 1 W-class GaN MMIC Power Amplifier for Beyond 5G

〇Keigo Nakatani1, Yoshifumi Kawamura1, Akihito Hirai1, Koji Yamanaka1 (1. Mitsubishi Electric Corporation (Japan))
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[TuB4-03]Thin-Barrier AlGaN/GaN HEMTs on 6-inch Si with PAE > 70% and Comparable Power Density for D-mode and E-mode Operations

〇Mengdi Li1, Jiejie Zhu1, Wanshuo Liao1, Yifan Chen1, Sheng Zhang2, Ke Wei2, Xinyu Liu2, Xiaohua Ma1, Yue Hao1 (1. Xidian Univ. (China), 2. Inst. of Microelectronics, Chinese Academy of Sciences (China))
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[TuB4-04]Influence of Barrier and Gate Foot Scaling on the RF and Noise Performance of AlInAs/GaInAs HEMTs

〇Fran Kostelac1, Giorgio Bonomo1, Tamara Saranovac1, Fehmi Altunkas1, Diego Marti1, Ralf Flückizer1, Olivier Ostinelli1, Colombo R. Bolognesi1 (1. ETH Zurich (Switzerland))
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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[TuB4-05]High On/Off-Ratio Recessed-Gate E-Mode AlGaN/GaN MIS-HEMTs on Si with High Current Density for RF Applications

〇Tsung-Lin Lee1, Po-Yen Huang2, Haoran Wang1, Yu-Hao Lin1, Lung-Hsing Hsu3, Ming-Hsuan Kao3, Wen-Hsien Huang3, Chang-Hong Shen2, Shawn S. H. Hsu1, Roy K.-Y. Wong1 (1. Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan), 2. College of Semiconductor Res., National Tsing Hua Univ. (Taiwan), 3. Taiwan Semiconductor Res. Inst. (Taiwan))
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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[TuB4-06]AlN-buffer based AlGaN/GaN HEMTs on free-standing AlN and SiC Substrates for RF Applications

〇Philipp Gribisch1, Mihaela Wolf1, Frank Brunner1, Natalia Kemf1, Roland Weingärtner2, Sven Besendörfer2, Oliver Hilt1 (1. Ferdinand-Braun Institut (FBH) Berlin (Germany), 2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB) Erlangen (Germany))
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