[TuB4] High-Speed III-V Transistors

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[TuB4-02 Invited] A W-band 1 W-class GaN MMIC Power Amplifier for Beyond 5G

〇Keigo Nakatani¹, Yoshifumi Kawamura¹, Akihito Hirai¹, Koji Yamanaka¹ (1. Mitsubishi Electric Corporation (Japan))

This paper presents the design and measurement of a W-band (75–110 GHz) Gallium Nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit (MMIC) developed for Non-Terrestrial Networks (NTN) feeder links. The GaN PA MMIC was fabricated using a 0.15 μm gate-length GaN process with radiation-resistant capability. The fabricated W-band GaN PA MMIC achieved an output power of 29.1 to 30.3 dBm and a power-added efficiency of 7.6 to 12.2% over 90 to 98 GHz, corresponding to over 1 W output power in the W-band.