[TuB4] High-Speed III-V Transistors

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[TuB4-03] Thin-Barrier AlGaN/GaN HEMTs on 6-inch Si with PAE > 70% and Comparable Power Density for D-mode and E-mode Operations

〇Mengdi Li¹, Jiejie Zhu¹, Wanshuo Liao¹, Yifan Chen¹, Sheng Zhang², Ke Wei², Xinyu Liu², Xiaohua Ma¹, Yue Hao¹ (1. Xidian Univ. (China), 2. Inst. of Microelectronics, Chinese Academy of Sciences (China))

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