Presentation Information

[TuB4-04]Influence of Barrier and Gate Foot Scaling on the RF and Noise Performance of AlInAs/GaInAs HEMTs

〇Fran Kostelac1, Giorgio Bonomo1, Tamara Saranovac1, Fehmi Altunkas1, Diego Marti1, Ralf Flückizer1, Olivier Ostinelli1, Colombo R. Bolognesi1 (1. ETH Zurich (Switzerland))

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