[TuB4] High-Speed III-V Transistors

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[TuB4-05] High On/Off-Ratio Recessed-Gate E-Mode AlGaN/GaN MIS-HEMTs on Si with High Current Density for RF Applications

〇Tsung-Lin Lee¹, Po-Yen Huang², Haoran Wang¹, Yu-Hao Lin¹, Lung-Hsing Hsu³, Ming-Hsuan Kao³, Wen-Hsien Huang³, Chang-Hong Shen², Shawn S. H. Hsu¹, Roy K.-Y. Wong¹ (1. Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan), 2. College of Semiconductor Res., National Tsing Hua Univ. (Taiwan), 3. Taiwan Semiconductor Res. Inst. (Taiwan))

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