[TuB4] High-Speed III-V Transistors

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[TuB4-06] AlN-buffer based AlGaN/GaN HEMTs on free-standing AlN and SiC Substrates for RF Applications

〇Philipp Gribisch¹, Mihaela Wolf¹, Frank Brunner¹, Natalia Kemf¹, Roland Weingärtner², Sven Besendörfer², Oliver Hilt¹ (1. Ferdinand-Braun Institut (FBH) Berlin (Germany), 2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB) Erlangen (Germany))

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