[TuC2] GaN Vertical Power Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[TuC2-02] Electrical Characterization of High-Purity N-Type GaN Grown by Quartz-Free Hydride Vapor Phase Epitaxy with World-Record Electron Mobility

〇Yusuke Hirayama¹, Masahiro Horita^1,2, Shota Kaneki³, Hajime Fujikura³, Jun Suda^1,2 (1. Nagoya Univ. (Japan), 2. Nagoya Univ. IMaSS (Japan), 3. Sumitomo Chemical Corp. (Japan))

Quartz-free hydride vapor phase epitaxy (QF-HVPE) is a promising growth technique for high-purity drift layers with large thickness of vertical GaN power devices. In this study, trap characterization was performed for n-type GaN layers with world-record mobility (>1600 cm²/Vs) grown by the QF-HVPE method using a newly developed reactor. Deep-level transient spectroscopy (DLTS) revealed several electron and hole traps located within 1 eV of the conduction and valence band edges, all of which were found to be at low concentrations (approximately 5 × 10¹³ cm^-3). Furthermore, the concentrations of other traps near the mid-gap region were estimated to be below 1 × 10¹³ cm^-3 for donor-type traps and below 5 × 10¹³ cm^-3 for acceptor-type traps. These results indicate that the QF-HVPE method using the new reactor enables the growth of high-purity GaN with extremely low trap concentrations.