[TuC2] GaN Vertical Power Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[TuC2-02] Electrical Characterization of High-Purity N-Type GaN Grown by Quartz-Free Hydride Vapor Phase Epitaxy with World-Record Electron Mobility

〇Yusuke Hirayama¹, Masahiro Horita^1,2, Shota Kaneki³, Hajime Fujikura³, Jun Suda^1,2 (1. Nagoya Univ. (Japan), 2. Nagoya Univ. IMaSS (Japan), 3. Sumitomo Chemical Corp. (Japan))

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