[TuC2] GaN Vertical Power Devices | CSW2026

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Session Details

Oral SessionScope C: Power devices

[TuC2]GaN Vertical Power Devices

Tue. May 26, 2026 11:00 AM - 12:45 PM JST
Tue. May 26, 2026 2:00 AM - 3:45 AM UTC

Room C(3rd floor)

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[TuC2-01]Advances and Integration Strategies for High-k Gate Dielectrics in GaN and SiC Power Devices

〇Andrew T. Binder¹, Jeff Steinfeldt¹, Joseph P. Klesko¹, Peter Dickens¹, Kevin Reilly¹, Robert J. Kaplar¹ (1. Sandia National Labs. (USA))

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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[TuC2-02]Electrical Characterization of High-Purity N-Type GaN Grown by Quartz-Free Hydride Vapor Phase Epitaxy with World-Record Electron Mobility

〇Yusuke Hirayama¹, Masahiro Horita^1,2, Shota Kaneki³, Hajime Fujikura³, Jun Suda^1,2 (1. Nagoya Univ. (Japan), 2. Nagoya Univ. IMaSS (Japan), 3. Sumitomo Chemical Corp. (Japan))

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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[TuC2-03]Unveiling the Trade-off Mechanism between Breakdown Voltage and Dynamic Stability in Vertical GaN FinFETs with PECVD-SiNx Spacers

〇Chengzhi Zhang¹, Aditya Kundapura Bhat¹, Khaled Ahmeda², Xiang Li², Martin Kuball¹, Matthew D Smith¹ (1. CDTR, School of Physics, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL (UK), 2. Dynex Semiconductor Ltd, Doddington Road, Lincoln (UK))

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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[TuC2-04]627-V Fully-vertical GaN-on-SiC Trench MOSFETs and Demonstration of Large-Area Hexagonal Trench Devices

〇Jialun LI¹, Xuancong Fan², Hui Guo¹, Yuanzhi He¹, Renqiang Zhu¹, Kei May Lau¹ (1. Division of Emerging Interdisciplinary Area, The Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. Department of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Tech. (Hong Kong))

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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[TuC2-05]Impact of Sidewall-Gate Structure on Quasi-Saturation in Vertical GaN MOSFETs

〇Ting Ci Li¹, Chih-Kang Chang¹, Jun-Xiang Wang¹, Jian-Jang Huang¹ (1. National Taiwan University (Taiwan))

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12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[TuC2-06]Stimulated Raman Scattering Microscopy for 3D Imaging of Laser-Induced Stress Distribution in a Bulk GaN Substrate

〇Yusuke Wakamoto¹, Shun Takahashi¹, Atsushi Tanaka², Takuya Maeda¹, Yasuyuki Ozeki¹ (1. The Univ. of Tokyo (Japan), 2. Nagoya Univ. (Japan))

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