[TuC2] GaN Vertical Power Devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[TuC2-03] Unveiling the Trade-off Mechanism between Breakdown Voltage and Dynamic Stability in Vertical GaN FinFETs with PECVD-SiNx Spacers

〇Chengzhi Zhang¹, Aditya Kundapura Bhat¹, Khaled Ahmeda², Xiang Li², Martin Kuball¹, Matthew D Smith¹ (1. CDTR, School of Physics, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL (UK), 2. Dynex Semiconductor Ltd, Doddington Road, Lincoln (UK))

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