[TuC2] GaN Vertical Power Devices

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[TuC2-04] 627-V Fully-vertical GaN-on-SiC Trench MOSFETs and Demonstration of Large-Area Hexagonal Trench Devices

〇Jialun LI¹, Xuancong Fan², Hui Guo¹, Yuanzhi He¹, Renqiang Zhu¹, Kei May Lau¹ (1. Division of Emerging Interdisciplinary Area, The Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. Department of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Tech. (Hong Kong))

In this work, we demonstrate 627-V fully-vertical GaN-on-SiC trench MOSFETs with good ON-state performance. The best device, with a 7-μm-thick drift layer, features a high J_DS,max of 2.8 kA/cm², an R_ON,sp of 7.6 mΩ·cm² and a V_th of 4.5 V. The single-trench device is successfully scaled to large-area hexagonal trench devices, achieving a high ON-state current of 2.2 A while maintaining a 380 V breakdown voltage.