[TuC2] GaN Vertical Power Devices

12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[TuC2-06] Stimulated Raman Scattering Microscopy for 3D Imaging of Laser-Induced Stress Distribution in a Bulk GaN Substrate

〇Yusuke Wakamoto¹, Shun Takahashi¹, Atsushi Tanaka², Takuya Maeda¹, Yasuyuki Ozeki¹ (1. The Univ. of Tokyo (Japan), 2. Nagoya Univ. (Japan))

Wide-area 3D imaging of laser-induced stress within a bulk GaN substrate was successfully demonstrated using stimulated Raman scattering (SRS) microscopy, which enables significantly faster acquisition of Raman signals while maintaining a non-invasive and non-destructive manner. The spatial distribution of internal stress was visualized, revealing a clear in-plane anisotropy with compressive and tensile stresses along the a- and m-axis, respectively, as well as its extension in the depth direction. This characterization using SRS microscopy contributes to visualizing stress distribution in GaN, facilitating the understanding and optimization of fabrication processes including laser slicing.