[TuC4] Joint - Ga2O3 Power Devices

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[TuC4-01 Invited] Progress of β-Ga₂O₃ Trench-Implemented Vertical Schottky Diodes

〇Akio Takatsuka¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1. Novel Crystal Technology, Inc. (Japan))

We report the development and characteristics of our β-Ga₂O₃ trench-implemented diodes. The fabricated β-Ga₂O₃ trench metal oxide semiconductor Schottky diodes (MOSSBDs) exhibited a specific on-resistance of 4.2 mΩ·cm² and a breakdown voltage of −1844 V. The power device figure of merit was 0.81 GW/cm², which was the highest among β-Ga₂O₃ diodes with a Schottky interface. The critical electric field of 5.2 MV/cm enhances the prospects for realizing β-Ga₂O₃ power devices comparable to or better than SiC-based counterparts.