CSW2026
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Session Details

Oral Joint SessionJoint Session C G

[TuC4]Joint - Ga2O3 Power Devices

Tue. May 26, 2026 4:30 PM - 6:00 PM JST
Tue. May 26, 2026 7:30 AM - 9:00 AM UTC
Room C(3rd floor)
4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[TuC4-01]Progress of β-Ga2O3 Trench-Implemented Vertical Schottky Diodes

〇Akio Takatsuka1, Hironobu Miyamoto1, Kohei Sasaki1, Akito Kuramata1 (1. Novel Crystal Technology, Inc. (Japan))
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[TuC4-02]Time-Dependent Reliability Study of Solution-Processed BaTiO3 With >400 Dielectric Constant and 5-MV/cm Field Strength for β-Ga2O3 Power Devices

〇Zhiqiang Li1, Wenpeng Zhou1, Jiye Yang1, Zuokai Wen1, Man Hoi Wong1 (1. The Hong Kong University of Science and Technology (Hong Kong))
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[TuC4-03]Low Temperature Forward Current Characteristics of Trench Schottky Diode on b-Ga2O3

〇Anastasiia Kochkova1, Aditya K. Bhat1, Sai c Vanjari1, Sven Friedemann2, Martin Kuball1 (1. CDTR, Univ. of Bristol (UK), 2. School of Physics, University of Bristol (UK))
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[TuC4-04]Press-Pack β-Ga2O3 Schottky Barrier Diode for High-Power Operation

〇Wenpeng Zhou1, Kohei Sasaki2, Mian Tao3, Zhanqing Yu4, Shi-Wei Ricky Lee5, Akito Kuramata2, Rong Zeng4, Man Hoi Wong1 (1. Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. Novel Crystal Technology Inc. (Japan), 3. EPACK Lab., Hong Kong Univ. of Sci. and Tech. (Hong Kong), 4. Electrical Engineering, Tsinghua Univ. (China), 5. Mechanical and Aerospace Engineering and EPACK Lab., Hong Kong Univ. of Sci. and Tech. (Hong Kong))
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[TuC4-05]Relationship Between Metal Work Function and Schottky Barrier Height in HVPE-grown β-Ga2O3

〇Eito Hatayama1, Kazutaka Kanegae1, Hiroyuki Nishinaka1 (1. Kyoto Inst. Tech. (Japan))
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