[TuC4] Joint - Ga2O3 Power Devices

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[TuC4-02] Time-Dependent Reliability Study of Solution-Processed BaTiO₃ With >400 Dielectric Constant and 5-MV/cm Field Strength for β-Ga₂O₃ Power Devices

〇Zhiqiang Li¹, Wenpeng Zhou¹, Jiye Yang¹, Zuokai Wen¹, Man Hoi Wong¹ (1. The Hong Kong University of Science and Technology (Hong Kong))

We report time-dependent breakdown results of high-permittivity BaTiO₃ (BTO) integrated with the ultrawide-bandgap Ga₂O₃ platform by a chemical solution deposition (CSD) process. Utilizing a BTO seed layer and a Pt anode, BTO Ga₂O₃ MOS capacitors (MOSCAP) exhibited a highest breakdown voltage in excess of 2500 V and a low leakage current density at breakdown. With a dielectric constant of over 400 extracted using an interdigital electrode structure, the simulated peak electric fields sustained in the Ga₂O₃ and BTO are close to 8 MV cm and 5 MV cm, respectively. Time-dependent breakdown assessment based on the E-model projected a 10-year lifetime with a 0.01% failure rate at 1686 V for the MOSCAPs, validating the reliability of the CSD strategy for high-voltage Ga₂O₃ devices.