Presentation Information
[TuC4-03]Low Temperature Forward Current Characteristics of Trench Schottky Diode on b-Ga2O3
〇Anastasiia Kochkova1, Aditya K. Bhat1, Sai c Vanjari1, Sven Friedemann2, Martin Kuball1 (1. CDTR, Univ. of Bristol (UK), 2. School of Physics, University of Bristol (UK))
The reliability of b-Ga2O3 trench Schottky barrier diode (TSBD) operating under cryogenic temperature conditions is an important factor for determining their suitability for the integration of the devices for aerospace applications. In this work, the temperature dependence of forward IV of TSBD, fabricated on unintentionally doped (1016 cm-3) HVPE b-Ga2O3, is systematically characterized over temperature range from 16 K to 286 K. Key finding include - firstly, the temperature dependence of the ideality factor and barrier height calculated based on the thermionic emission model indicated some inhomogeneity of the Schottky barrier height. Secondly, the highest current density (437 A/cm2 at 5V) and the lowest on-resistance (9.7 mOhm/cm2) were observed around 150 K, corresponding to the highest electron mobility. Carrier freeze-out was observed at temperatures below 60 K. The activation energy of the forward current in this temperature range is 20 meV, which agrees with the ionization energy of the Si dopants
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