[TuC4] Joint - Ga2O3 Power Devices

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[TuC4-04] Press-Pack β-Ga2O3 Schottky Barrier Diode for High-Power Operation

〇Wenpeng Zhou¹, Kohei Sasaki², Mian Tao³, Zhanqing Yu⁴, Shi-Wei Ricky Lee⁵, Akito Kuramata², Rong Zeng⁴, Man Hoi Wong¹ (1. Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. Novel Crystal Technology Inc. (Japan), 3. EPACK Lab., Hong Kong Univ. of Sci. and Tech. (Hong Kong), 4. Electrical Engineering, Tsinghua Univ. (China), 5. Mechanical and Aerospace Engineering and EPACK Lab., Hong Kong Univ. of Sci. and Tech. (Hong Kong))

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