[TuC4] Joint - Ga2O3 Power Devices

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[TuC4-04] Press-Pack β-Ga2O3 Schottky Barrier Diode for High-Power Operation

〇Wenpeng Zhou¹, Kohei Sasaki², Mian Tao³, Zhanqing Yu⁴, Shi-Wei Ricky Lee⁵, Akito Kuramata², Rong Zeng⁴, Man Hoi Wong¹ (1. Electronic and Computer Engineering, Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. Novel Crystal Technology Inc. (Japan), 3. EPACK Lab., Hong Kong Univ. of Sci. and Tech. (Hong Kong), 4. Electrical Engineering, Tsinghua Univ. (China), 5. Mechanical and Aerospace Engineering and EPACK Lab., Hong Kong Univ. of Sci. and Tech. (Hong Kong))

β-Ga₂O₃ is a competitive candidate for high-voltage power electronics because of its high critical field strength and easy access to high-quality native substrates. This work reports a press-pack β-Ga₂O₃ Schottky barrier diode (SBD) for high-power operation. Reverse current–voltage tests of the press-back β-Ga₂O₃ SBD under various pressures indicated that no mechanical damage or defects that could have degraded the electrical performance were generated. Forward current–voltage and thermal tests showed that a higher pressure would reduce the contact resistance and the thermal resistance (R_th), both of which are beneficial for increasing the power capacity of the press-pack β-Ga₂O₃ SBD. Under a pressure of 20 MPa, the steady-state junction temperature rise did not exceed 150 K at DC 10 A and a corresponding heating power of over 27 W, from which an R_th below 5 K/W was determined.