[TuC4] Joint - Ga2O3 Power Devices

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[TuC4-05] Relationship Between Metal Work Function and Schottky Barrier Height in HVPE-grown β-Ga₂O₃

〇Eito Hatayama¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹ (1. Kyoto Inst. Tech. (Japan))

Precise control of the Schottky barrier height (SBH) is essential for improving device characteristics and reliability. In this study, (001) β-Ga₂O₃ vertical Schottky barrier diodes (SBDs) with a range of metal electrodes as Schottky contacts were fabricated, and the SBHs were investigated from 300 K to 410 K. We observed a linear dependence of SBH on the metal work function (Φ_m). In addition, the temperature dependence of SBH was correlated with that of the bandgap energy. These results demonstrate the controllability of SBH and provide essential guidelines for the design of reliable β-Ga₂O₃ power devices.