[TuD1] Advanced Semiconductor Lasers (II)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[TuD1-02 Invited] Recent Progress and Novel Approaches of InGaN Laser Diodes and Superluminescent Diodes.

〇Szymon Stanczyk¹, Anna Wanda Kafar¹, Adam Brejnak¹, Muhammed Atkas¹, Piotr Perlin¹ (1. Institute of High Pressure Physics of the Polish Academy of Sciences (Poland))

The technology of nitride semiconductor emitters is constantly evolving, introducing new concepts to expand device functionality and address application requirements. In this work, we will present a review of recent progress in the development of LDs and SLDs at the Institute of High Pressure Physics PAS.First, we will present our results on polarisation doping in visible-light emitters. This approach, essential for UV LDs, can also be successfully implemented for visible emitters to improve p-type layer conductivity and increase device temperature stability. We will demonstrate the successful use of a polarization-doped p-cladding layer for LED, LD, and SLD diode applications. Finally, we demonstrate the parameters of devices optimised for high power operation. Next, we demonstrate gain-guided nitride LDs with a plasma-induced isolation. This approach has the obvious benefit of a simplified fabrication process. The proposed approach utilizes RIE etching in an oxygen plasma environment to selectively isolate the p-type GaN and AlGaN layers. The fabricated devices exhibit single-mode lateral operation with stable modal behaviour, despite the absence of a ridge structure. Finally, we present our development of waveguides monolithically integrated with LDs and based on the same epitaxial structure. Interestingly, thanks to improved lateral refractive-index contrast in the passive area, we also observe a beam-shaping effect, leading to an almost perfectly circular near-field.