CSW2026
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Session Details

Oral SessionScope D: Photonic devices and related technologies

[TuD1]Advanced Semiconductor Lasers (II)

Tue. May 26, 2026 8:30 AM - 10:15 AM JST
Tue. May 26, 2026 11:30 PM - 1:15 AM UTC
Room D(3rd floor)
Chair:Maki Kushimoto(Nagoya Univ.)
8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[TuD1-01]From Wafer-Scale VCSEL Arrays to Fusion-Class Output:
A Photonic-Band Design Framework for Coherent Array Scaling

〇Tatsushi Hamaguchi1, Haisong Jiang1, Miki Isoda1, Kiichi Hamamoto1 (1. Kyushu University (Japan))
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9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[TuD1-02]Recent Progress and Novel Approaches of InGaN Laser Diodes and Superluminescent Diodes.

〇Szymon Stanczyk1, Anna Wanda Kafar1, Adam Brejnak1, Muhammed Atkas1, Piotr Perlin1 (1. Institute of High Pressure Physics of the Polish Academy of Sciences (Poland))
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[TuD1-03]Electrically Pumped AlGaN Edge-Emitting UV-B Laser Diodes Grown by Molecular Beam Epitaxy

Huabin Yu1, Shubham Mondal1, Rui Shen1, Md Tanvir Hasan1, David He1, Jiangnan Liu1, Samuel Yang1, Minming He1, Omar Alkhazragi1, Danhao Wang1, Mackillo Kira1, Parag Deotare1, Di Liang1, 〇Zetian Mi1 (1. University of Michigan (USA))
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[TuD1-04]Deep-Ultraviolet AlGaN Laser Diodes Employing Low-Resistivity n-type Ohmic Contacts

〇Kazuaki Ebata1, Masanobu Hiroki1, Seiya Kawasaki1, Kouta Tateno1, Kazuyuki Hirama1, Yoshitaka Taniyasu1 (1. NTT Basic Research Labs. (Japan))
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[TuD1-05]Epitaxial Growth of 775 nm Strained In0.1Al0.2Ga0.7As Digital Alloy Quantum Well Laser Diodes for Quantum Photonic Applications

〇Tsimafei Laryn1,2, Yeonhwa Kim1,3, Kenneth Duque1,2, Won Jun Choi1, Daehwan Jung1,2 (1. Korea Inst. of Sci. and Tech. (Korea), 2. Univ. of Sci. and Tech. (Korea), 3. Korea Univ. (Korea))
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