[TuD1] Advanced Semiconductor Lasers (II)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[TuD1-03] Electrically Pumped AlGaN Edge-Emitting UV-B Laser Diodes Grown by Molecular Beam Epitaxy

Huabin Yu¹, Shubham Mondal¹, Rui Shen¹, Md Tanvir Hasan¹, David He¹, Jiangnan Liu¹, Samuel Yang¹, Minming He¹, Omar Alkhazragi¹, Danhao Wang¹, Mackillo Kira¹, Parag Deotare¹, Di Liang¹, 〇Zetian Mi¹ (1. University of Michigan (USA))

In this work, we demonstrate an electrically pumped AlGaN-based edge-emitting UV-B laser diode grown by molecular beam epitaxy (MBE) on the AlN substrate. The UV-B laser diode adopts a ridge-waveguide geometry with engineered distributed Bragg reflectors. Under pulsed electrical injection, lasing emission at 298.5 nm is realized with a low threshold current density of 3.4 kA cm^-2. Moreover, nonlinear light–current characteristics and pronounced spectral narrowing with a full width at half maximum of ~0.2 nm is observed above threshold.