Presentation Information
[TuD1-04]Deep-Ultraviolet AlGaN Laser Diodes Employing Low-Resistivity n-type Ohmic Contacts
〇Kazuaki Ebata1, Masanobu Hiroki1, Seiya Kawasaki1, Kouta Tateno1, Kazuyuki Hirama1, Yoshitaka Taniyasu1 (1. NTT Basic Research Labs. (Japan))
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