[TuD1] Advanced Semiconductor Lasers (II)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[TuD1-05] Epitaxial Growth of 775 nm Strained In_0.1Al_0.2Ga_0.7As Digital Alloy Quantum Well Laser Diodes for Quantum Photonic Applications

〇Tsimafei Laryn^1,2, Yeonhwa Kim^1,3, Kenneth Duque^1,2, Won Jun Choi¹, Daehwan Jung^1,2 (1. Korea Inst. of Sci. and Tech. (Korea), 2. Univ. of Sci. and Tech. (Korea), 3. Korea Univ. (Korea))

We present the epitaxial growth and lasing performance of In_0.1Al_0.2Ga_0.7As digital-alloy quantum well lasers emitting at 779 nm. We show that digital-alloy quantum wells exhibit superior optical properties compared to their random (mixed) alloy counterparts. Lasers based on digital-alloy quantum wells demonstrated amplified spontaneous regime operation at 779 nm, showcasing that with further laser-structure optimization, In_0.1Al_0.2Ga_0.7As digital allow quantum wells can be efficiently used for 775 nm lasers.