[TuD4] Photo Detection Technologies

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[TuD4-01 Invited] Photoelectrical Readout and Characterization of Defect Spins in Silicon Carbide for Quantum Applications

〇Naoya Morioka^1,2 (1. Kyoto Univ. (Japan), 2. Center for Spintronics Res. Network, Inst. for Chemical Res., Kyoto Univ. (Japan))

Spin-active color centers in wide-bandgap semiconductors have recently attracted significant attention as important solid-state quantum resources for applications such as quantum communication and quantum sensing. Silicon carbide (SiC) is a representative compound semiconductor that hosts various promising defects and offers excellent compatibility with electronic devices. Combining the charge degree of freedom of color centers with SiC device platforms that enable carrier transport can open a pathway beyond conventional optical techniques toward SiC-based wafer-scale optoelectronic quantum devices. In particular, photocurrent detection enables sensitive, integrated spin readout and provides a complementary probe for defect characterization beyond purely optical methods. In this talk, we present our recent results on photoelectrical studies for spin readout and characterization of color centers in silicon carbide.