Session Details
[TuD4]Photo Detection Technologies
Tue. May 26, 2026 4:30 PM - 6:15 PM JST
Tue. May 26, 2026 7:30 AM - 9:15 AM UTC
Tue. May 26, 2026 7:30 AM - 9:15 AM UTC
Room D(3rd floor)
Chair:Masahiro Nada(NTT Device Innovation Center)
[TuD4-01]Photoelectrical Readout and Characterization of Defect Spins in Silicon Carbide for Quantum Applications
〇Naoya Morioka1,2 (1. Kyoto Univ. (Japan), 2. Center for Spintronics Res. Network, Inst. for Chemical Res., Kyoto Univ. (Japan))
[TuD4-02]High-performance InGaAs photodiodes on InP-on-silicon (InPoSi) substrates for SWIR imaging
〇Claire Besancon1, Eva Izquierdo1, Antoine Elias1, Guillaume Daccord1, Jean Decobert1, Michel Garcia1, Olivier Parillaud1, Loïc Sanchez2, Toufiq Bria2, Frank Fournel2, Jean-Luc Reverchon1 (1. III-V Lab, a joint lab of Nokia Bell Labs, Thales Research and Technology and CEA LETI (France), 2. Univ. Grenoble Alpes, CEA LETI (France))
[TuD4-03]Low-Photon SWIR Detection at 200 MHz Count Rates Using Linear-Mode AlGaAsSb APDs
〇Benjamin Sheridan1,2, Xiao Collins2, Benjamin White2, Chee Hing Tan1 (1. The Univ. of Sheffield (UK), 2. Phlux Technology Ltd. (UK))
[TuD4-04]Waveguide Integrated APD with AlGaAsSb Multiplier and
247 GHz A/W External Responsivity-Gain-Bandwidth Product
〇Hendrik Boerma1, Pascal Rustige1, Tobias Beckerwerth1, Sven Mutschall1, Patrick Runge1, Martin Schell1,2 (1. Fraunhofer Heinrich-Hertz-Institute (Germany), 2. Technische Universität Berlin (Germany))
[TuD4-05]High-Responsivity InGaAs MSM Photodetector with Narrow-Gap-Parallel-electrode Configuration Integrated on Si Waveguide
〇Kentaro Komatsu1, Tomohiro Akazawa1, Stéphane Monfray2, Frederic Boeuf2, Kasidit Toprasertpong1, Mitsuru Takenaka1 (1. The Univ. of Tokyo (Japan), 2. STMicroelectronics (France))
[TuD4-06]100 GHz O- to L-Band Balanced Photodetector Module
〇Jonas Gläsel1, Hendrik Boerma1, Johannes Fabian Eppli1, Christina Wunsch1, Felix Ganzer1, Patrick Runge1, Martin Schell1,2 (1. Fraunhofer HHI (Germany), 2. Technische Univ. Berlin (Germany))
