[TuD4] Photo Detection Technologies

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[TuD4-02] High-performance InGaAs photodiodes on InP-on-silicon (InPoSi) substrates for SWIR imaging

〇Claire Besancon¹, Eva Izquierdo¹, Antoine Elias¹, Guillaume Daccord¹, Jean Decobert¹, Michel Garcia¹, Olivier Parillaud¹, Loïc Sanchez², Toufiq Bria², Frank Fournel², Jean-Luc Reverchon¹ (1. III-V Lab, a joint lab of Nokia Bell Labs, Thales Research and Technology and CEA LETI (France), 2. Univ. Grenoble Alpes, CEA LETI (France))

InP-based semiconductors are essential for optoelectronics, enabling light emission, modulation, amplification, and detection in optical communication systems. Beyond telecommunications, InP is investigated for SWIR sensing, opening perspectives toward consumer-oriented applications such as LiDAR. The high cost and limited wafer size of InP restrict large-scale production. Integrating III–V semiconductors on silicon provides a pathway to overcome these limitations. One integration technique involves transferring a thin InP layer onto a silicon wafer by wafer-bonding, forming the InP-on-silicon (InPoSi) platform, on which epitaxial regrowth is subsequently performed. We report InGaAs photodiodes on 100 mm InPoSi substrates and compare them with devices on native InP. Time-resolved photoluminescence indicates minority carrier lifetimes of 1.5-2 µs, demonstrating high material quality. Dark currents are ~100 nA/cm² at –0.1 V, less than one order of magnitude above reference devices. InPoSi substrates can support high-quality InGaAs photodiodes approaching the performance of native InP devices.