[TuD4] Photo Detection Technologies

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[TuD4-07 LN] Over 45% Power-Conversion-Efficiency in GaInN/GaN-Based Photoelectric Transducers for OWPT Systems with Improved Epilayer Qualities

〇Manatsu Nagai¹, Sotaro Ishida¹, Jun Hasegawa¹, Takashi Egawa², Makoto Miyoshi^1,2 (1. Nagoya Inst. of Tech. (Japan), 2. Innovation Common Res. Center for Advanced Semiconductor Electronics (Japan))

This paper reports on the improvement in epilayer qualities and device performance of GaInN/GaN multiple quantum well (MQW) photoelectric transducers (PTs) for optical wireless power transmission (OWPT) systems. We optimized the growth conditions for epitaxial GaInN/GaN MQW structures and applied the optimized conditions to the growth using a low-dislocation-density GaN substrate. The grown epilayer showed sharp MQW interfaces and atomically flat surfaces, and the fabricated PTs exhibited a high power-conversion-efficiency exceeding 45% at a light illumination with 390 nm in wavelength and 5 mW/cm² in optical power density, thanks to the high fill factor of 72% and the high short-circuit voltage over 2.3 V.