[TuP3A] Epitaxy and process

[TuP3A-02] Circularly Polarized Luminescence Properties of Dilute Nitride GaInNAs/GaAs Multiple Quantum Wells with Spin-Filtering Defects

〇Eita Tagawa¹, Ayano Morita¹, Keisuke Minehisa², Hiroto Kise¹, Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1. IST, Hokkaido Univ. (Japan), 2. RCIQE, Hokkaido Univ. (Japan))

Low-temperature growth of dilute nitride GaInNAs/GaAs quantum wells (QWs) induces not only quantum confinements of electrons and holes, but also spin-filtering effect due to the nitrogen-derived deep-level defect states. In this study, GaInNAs/GaAs and InGaAs/GaAs multiple QWs were grown at 400°C and their circularly polarized photoluminescence (PL) properties were investigated. Time-resolved circularly polarized PL measurements revealed that introducing nitrogen induced a large spin-polarization amplification while maintaining the luminescence intensity.